PART |
Description |
Maker |
HYB25M144180C HYB25R144180C HYB25M128160C |
144-Mbit direct RDRAM(144 Mbit 直接 RDRAM) 144-MBit Direct RDRAM(144 M位直接RDRAM) 144兆位的直接的RDRAM144米位直接的RDRAM 128-Mbit direct RDRAM(128 Mbit ?存? RDRAM)
|
SIEMENS AG
|
MBM29F400TA MBM29F400BA |
4M (512K×8/256K ×16) Bit Flash Memory(4M V 电源电压512K×8/256K ×16位闪速存储器) 4分(12k × 8/256K × 16)位闪存分单5V的电源电压为512k × 8/256K × 16位闪速存储器
|
Fujitsu Limited
|
K4R271669D-TCS8 K4R271669D K4R271669D-T |
128Mbit RDRAM(D-die)
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4R271669E |
128Mbit RDRAM(E-die)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K4R571669M |
Direct RDRAM?Data Sheet
|
Samsung Electronic
|
K4R881869D K4R571669D |
256/288Mbit RDRAM(D-die)
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
GS74116A GS74116ATP-10 GS74116AJ-12I GS74116AJ-12I |
256K X 16 STANDARD SRAM, 7 ns, PDSO44 256K x 16 4Mb Asynchronous SRAM 256K × 16 4Mb的异步SRAM RES, MTF 20K 1/4W 2% ER 16C 16#16 SKT PLUG ER 13C 3#8 3#12 7#16 SKT PLUG 10ns 256K X 16 4Mb Asynchronous SRAM 256K X 16 STANDARD SRAM, 7 ns, PBGA48
|
SRAM Electronic Theatre Controls, Inc. GSI[GSI Technology] N.A. ETC
|
M27C4002-15J1 M27C4002-80XJ6TR M27C4002-80XJ1X M27 |
256K X 16 UVPROM, 150 ns, CQCC44 256K X 16 UVPROM, 80 ns, CQCC44 256K X 16 UVPROM, 70 ns, CDIP40 256K X 16 OTPROM, 120 ns, PDIP40 256K X 16 OTPROM, 120 ns, PQCC44 256K X 16 OTPROM, 200 ns, PQCC44 256K X 16 UVPROM, 60 ns, CQCC44
|
STMICROELECTRONICS
|
MSM5764802 |
(MSM5716C50 / MSM5718C50 / MSM5764802) 16M / 18M / 64M Concurrent RDRAM
|
OKI
|
K4R881869 K4R881869M-NCK8 K4R881869M-NBCCG6 |
288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|